APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 1 C 8 all ratings @ t j = 25c unless otherwise specified these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com v dss = 600v r dson = 21m typ @ tj = 25c i d = 116a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? sic parallel schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? very low (12mm) profile ? each leg can be easily paralleled to achieve a phase leg of three times the current capability ? module can be configured as a three phase bridge ? rohs compliant triple phase leg coolmos? power module downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 2 C 8 absolute maximum ratings (per coolmos?) electrical characteristics (per coolmos?) symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 600v 200 a r ds(on) drain C source on resistance v gs = 10v, i d = 88a 18.5 21 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 6ma 2.4 3 3.6 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics (per coolmos?) symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v ; v ds = 100v f = 1mhz 13 nf c oss output capacitance 0.72 q g total gate charge v gs = 10v v bus = 480v i d = 88a 580 nc q gs gate C source charge 72 q gd gate C drain charge 300 t d(on) turn-on delay time inductive switching @ 25c v gs = 13v v bus = 400v i d = 88a r g = 0.8 23 ns t r rise time 10 t d(off) turn-off delay time 130 t f fall time 7 e on turn-on switching energy inductive switching @ 125c v gs = 13v, v bus = 400v i d = 88a, r g = 0.8 ? 1.2 mj e off turn-off switching energy 2.8 r thjc junction to case thermal resistance 0.20 c/w symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v i d continuous drain current t c = 25c 116 a t c = 80c 87 i dm pulsed drain current 400 v gs gate - source voltage 20 v r dson drain - source on resistance 21 m p d maximum power dissipation t c = 25c 625 w i ar avalanche current (repetitive and non repetitive) 13 a e ar repetitive avalanche energy 3 mj e as single pulse avalanche energy 1950 downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 3 C 8 series diode ratings and characteristics (per series diode) symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 600 v i rm maximum reverse leakage current v r = 600v 100 a i f dc forward current t c = 80c 75 a v f diode forward voltage i f = 75a t j = 25c 1.6 2 v t j = 150c 1.5 t rr reverse recovery time i f = 75a v r = 300v di/dt = 2000a/s t j = 25c 100 ns t j = 150c 150 q rr reverse recovery charge t j = 25c 3.6 nc t j = 150c 7.6 r thjc junction to case thermal resistance 0.80 c/w sic parallel diode rati ngs and characteristics (per parallel diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r = 600v t j = 25c 30 180 a t j = 175c 60 900 i f dc forward current tc = 100c 30 a v f diode forward voltage i f = 30a t j = 25c 1.6 1.8 v t j = 175c 2 2.4 q c total capacitive charge i f = 30a, v r = 600v di/dt = 1000a/s 84 nc c total capacitance f = 1mhz, v r = 200v 195 pf f = 1mhz, v r = 400v 150 r thjc junction to case thermal resistance 0.80 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150* c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g * t j = 175c for series and parallel diodes temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). pins ntc1 & ntc2 are only mounted on aptm100ta35sctpg power module. symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 4 C 8 sp6-p package outline (dimensions in mm) see application note 1902 - mounting instructions for sp6-p (12mm) power modules on www.microsemi.com typical coolmos? performance curve operating frequency vs drain current hard switching zcs zvs 0 100 200 300 400 40 50 60 70 80 90 i d drain current(a) frequency (khz) v ds =400v d=50% r g =0.8 ? t j =125c t c =75c switching energy vs current eon eoff 0 1 2 3 4 5 6 20 40 60 80 100 120 140 160 i d drain current (a) switching energy (mj) v ds =400v r g =0.8 ? l=100h t j =125c drain source on state resistance 20 30 40 50 25 50 75 100 125 150 t j (c) rds(on) (mr) v gs = 10v switching energy eon eoff 1 1.5 2 2.5 3 3.5 4 024681 0 gate resistance (ohms) switching energy (mj) v ds =400v i d =88a t j =125c l=100h downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 5 C 8 d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 6v 7v 10v v gs =20v 0 100 200 300 400 500 600 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics t j =25c 0 20 40 60 80 100 120 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 600 625 650 675 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage coss crss ciss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =480v i d =88a t j =25c low voltage output characteristics 5v 6v 7v 10v v gs =20v 0 100 200 300 400 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) t j =125c downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 6 C 8 typical series diode performance curve forw ard characteristic of diode t j =25c t j =150c 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) maximum effective transient thermal impedance, junction to case vs p ulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) typical sic parallel diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duratio n d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 100 200 300 400 500 600 200 300 400 500 600 700 800 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1000 1200 1 10 100 1000 v r reverse voltage c, capacitance (pf) downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 7 C 8 thermal impedance ; coolmos? thermal impedance ; series diode thermal impedance ; sic parallel diode rc final model r1 = 0.044 ? r2 = 0.103 ? r3 = 0.053 ? c1 = 0.022 f c2 = 0.347 f c3 = 4.31 f rc final model r1 = 0.176 ? r2 = 0.413 ? r3 = 0.211 ? c1 = 0.0055 f c2 = 0.086 f c3 = 1.07 f rc final model r1 = 0.176 ? r2 = 0.413 ? r3 = 0.211 ? c1 = 0.0055 f c2 = 0.086 f c3 = 1.07 f downloaded from: http:///
APTC60TAM21SCTPAG APTC60TAM21SCTPAGC rev 1 october, 2012 www.microsemi.com 8 C 8 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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